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NPT1012B

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Shenzhen Chive Electronics Co., Ltd.

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NPT1012B

Transistor Polarity : N-Channel

Technology : GaN Si

Product Category : RF JFET Transistors

Mounting Style : Screw

Gain : 13 dB

Transistor Type : HEMT

Pd - Power Dissipation : 44 W

Maximum Operating Temperature : + 200 C

Vds - Drain-Source Breakdown Voltage : 100 V

Packaging : Tray

Id - Continuous Drain Current : 4 mA

Vgs - Gate-Source Breakdown Voltage : 3 V

Manufacturer : MACOM

Description : RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN

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The NPT1012B,from MACOM,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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