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Transistor Polarity : N-Channel
Technology : GaN SiC
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 17 dB
Transistor Type : HEMT
Output Power : 70 W
Package / Case : Die
Maximum Operating Temperature : + 225 C
Vds - Drain-Source Breakdown Voltage : 100 V
Packaging : Gel Pack
Id - Continuous Drain Current : 6 A
Vgs - Gate-Source Breakdown Voltage : - 10 V to + 2 V
Manufacturer : Wolfspeed / Cree
Description : RF JFET Transistors GaN HEMT Die DC-18GHz, 70 Watt
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