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Vgs - Gate-Source Breakdown Voltage : 100 V
Technology : GaN SiC
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Pd - Power Dissipation : 45 W
Packaging : Tray
Vds - Drain-Source Breakdown Voltage : 32 V
Manufacturer : Qorvo
Description : RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
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T1G4004532-FL Images |