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Technology : GaAs
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 17.5 dB
Transistor Type : pHEMT
Pd - Power Dissipation : 550 mW
Package / Case : TSLP-8
Maximum Operating Temperature : + 150 C
Vds - Drain-Source Breakdown Voltage : 5.5 V
Packaging : Reel
Id - Continuous Drain Current : 54 mA
Manufacturer : Avago / Broadcom
Description : RF JFET Transistors GaAs RFIC LNA
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MGA-631P8-TR2G Images |