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Transistor Polarity : N-Channel
Technology : GaN SiC
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 14 dB
Transistor Type : HEMT
Output Power : 10 W
Pd - Power Dissipation : 12 W
Maximum Operating Temperature : + 95 C
Vds - Drain-Source Breakdown Voltage : 65 V
Packaging : Reel
Id - Continuous Drain Current : 500 mA
Manufacturer : MACOM
Description : RF JFET Transistors DC-3.5GHz Gain 14dB GaN SiC
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