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MAGX-000035-01000TP

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MAGX-000035-01000TP

Transistor Polarity : N-Channel

Technology : GaN SiC

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 14 dB

Transistor Type : HEMT

Output Power : 10 W

Pd - Power Dissipation : 12 W

Maximum Operating Temperature : + 95 C

Vds - Drain-Source Breakdown Voltage : 65 V

Packaging : Reel

Id - Continuous Drain Current : 500 mA

Manufacturer : MACOM

Description : RF JFET Transistors DC-3.5GHz Gain 14dB GaN SiC

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The MAGX-000035-01000TP,from MACOM,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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