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CGH09120F

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CGH09120F

Transistor Polarity : N-Channel

Technology : GaN

Product Category : RF JFET Transistors

Mounting Style : Screw

Gain : 21 dB

Transistor Type : HEMT

Output Power : 20 W

Package / Case : 440095

Maximum Operating Temperature : + 150 C

Vds - Drain-Source Breakdown Voltage : 120 V

Packaging : Tray

Maximum Drain Gate Voltage : 28 V

Id - Continuous Drain Current : 28 A

Vgs - Gate-Source Breakdown Voltage : - 10 V, 2 V

Pd - Power Dissipation : 56 W

Manufacturer : Wolfspeed / Cree

Description : RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt

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The CGH09120F,from Wolfspeed / Cree,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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