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Vgs - Gate-Source Breakdown Voltage : - 3 V
Technology : GaAs
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 10 dB
Transistor Type : pHEMT
Pd - Power Dissipation : 180 mW
Package / Case : SOT-363
Maximum Operating Temperature : + 150 C
Vds - Drain-Source Breakdown Voltage : 3 V
Packaging : Reel
Id - Continuous Drain Current : 40 mA
Manufacturer : Avago / Broadcom
Description : RF JFET Transistors Transistor GaAs High Frequency
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ATF-36163-TR2G Images |