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TGF2022-12

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Shenzhen Chive Electronics Co., Ltd.

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TGF2022-12

Vgs - Gate-Source Breakdown Voltage : - 14 V

Technology : GaAs

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 8 dB

Transistor Type : pHEMT

Package / Case : Die 4

Maximum Operating Temperature : + 150 C

Vds - Drain-Source Breakdown Voltage : 12 V

Packaging : Tray

Id - Continuous Drain Current : 360 mA

Manufacturer : Qorvo

Description : RF JFET Transistors DC-20GHz 1.2mm Pwr pHEMT (0.35um)

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The TGF2022-12,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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