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Transistor Polarity : N-Channel
Technology : GaN
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 14.5 dB
Transistor Type : HEMT
Output Power : 75 W
Package / Case : SMD/SMT
Maximum Operating Temperature : + 107 C
Vds - Drain-Source Breakdown Voltage : 150 V
Packaging : Reel
Maximum Drain Gate Voltage : 50 V
Id - Continuous Drain Current : 10.4 A
Vgs - Gate-Source Breakdown Voltage : - 10 V, 2 V
Pd - Power Dissipation : 52 W
Manufacturer : Wolfspeed / Cree
Description : RF JFET Transistors GaN HEMT 2.7-3.1GHz, 60 Watt
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