Sign In | Join Free | My frbiz.com |
|
Transistor Polarity : N-Channel
Technology : GaAs
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 15 dB
Transistor Type : pHEMT
Pd - Power Dissipation : 600 mW
Package / Case : SOT-343
Maximum Operating Temperature : + 160 C
Vds - Drain-Source Breakdown Voltage : 5.5 V
Packaging : Bulk
Id - Continuous Drain Current : 305 mA
Vgs - Gate-Source Breakdown Voltage : - 5 V
Manufacturer : Avago / Broadcom
Description : RF JFET Transistors Transistor GaAs Low Noise
![]() |
ATF-33143-BLKG Images |