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Transistor Polarity : NPN
Technology : Si
Product Category : RF Bipolar Transistors
Mounting Style : SMD/SMT
Transistor Type : Bipolar Power
Collector- Emitter Voltage VCEO Max : 17 V
Maximum Operating Temperature : + 85 C
DC Collector/Base Gain hfe Min : 100
Packaging : Reel
Configuration : Single Dual Base Dual Collector Quad Emitter
Manufacturer : Maxim Integrated
Emitter- Base Voltage VEBO : 2.3 V
Continuous Collector Current : 200 mA
Description : RF Bipolar Transistors 3.6V 1W RF Pwr Trans for 900MHz Ap
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MAX2601ESA+T Images |